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| 2SD862 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor Silicon NPN high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-126 CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Diode forward voltage Fall time Tmb 25 IC = 1.5A; IB = 0.15A IF = 1.5A 1.5 MAX 20 20 2 10 0.5 2.0 - UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 20 20 6 2 0.5 10 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=20V VEB=5V IC=1mA IC = 1.5A; IB = 0.15A IC = 100mA; VCE = 2V IC = 0.5A; VCE = 12V VCB = 10V TYP 20 60 80 75 MAX 0.1 0.2 0.5 400 - UNIT mA mA V V MHz pF us us us Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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